In contrast to the foreign atoms based filament approach, high work function. Resistive randomaccess memory reram technology has been viewed as one of the most reliable nonvolatile memories that have are emerging in markets. Transparent flexible resistive random access memory fabricated at room temperature appl. The achieved characteristics of resistive switching of tio 2 thin. All solutionprocessed, fully transparent resistive memory. Experimentally, the 119oriented cbti144 thin films were deposited onto the itoglass substrates by rf magnetron sputtering followed by rapid thermal annealing. Solution processed resistive random access memory devices. This technology bears some similarities to conductivebridging ram cbram, and phasechange memory pcm.
An indiumfree transparent resistive switching random access memory k. A fully transparent resistive memory for harsh environments. Nonvolatile memory resistive random access memory rram uclb. Resistive randomaccess memory rram or reram is a type of nonvolatile nv randomaccess ram computer memory that works by changing the resistance across a dielectric solidstate material. Tio2 thin film based transparent flexible resistive switching. All itobased transparent resistive switching random.
Abstract we report a transparent and flexible resistive random access memory reram using a multithinlayer electrode. A solutionprocessed method is developed to fabricate fully transparent resistive random access memory rram devices with a configuration of ftozro2ito, where the zirconium dioxide zro2 layer was firstly deposited on fluorine tin oxide fto substrate by solgel and then indium tin oxide ito films were deposited on zro2 layer by solgel as the top electrodes. Solutionprocessed flexible nio resistive random access. Reram, or resistive memory cells, is a type of nonvolatile memory that shares some similarities with phase change memory as both are considered to be types of memristor technologies reram, also called rram resistive random access memory, is considered to be a type of memristor technology a passive twoterminal electronic device that is designed to express. Nonvolatile memory resistive random access memory rram. Tio2 thin film based transparent flexible resistive. Request pdf transparent flexible resistive random access memory fabricated at room temperature we report the room temperature fabrication of highly transparent and flexible resistive random. Indium tin oxide ito is most commonly applied in current transparent optical panel.
Status and prospects of znobased resistive switching. Research progresses of resistive random access memory. Transparent resistive switching random access memory reram is of interest for the future integrated invisible circuitry. The invention discloses a fulltransparent resistive random access memory and application of barium stannate on the aspect of using the barium stannate as a transparent material with the stable resistance changing characteristic and belongs to the technical field of a semiconductor nonvolatile memory. According to the previous work, the issues could be removed by employing resistive random access memory rram that works on a resistancebased mechanism.
The integration of the transparent itonioito resistive random access memory reram with verticallycoupled bus waveguides, which is ultimately emerged as a rerambased microdisk resonator fabricated on lithium niobate linbo3 substrate, is successfully realized. Rram device based on hafnium oxide hfo x storage layer and indium. The memory device demonstrates not only good optical transmittance but also a forming. Uncovering the indium filament revolution in transparent. Transparent flexible resistive random access memory. Transparent flexible resistive random access memory fabricated at room temperature article in applied physics letters 95 september 2009 with 105 reads how we measure reads. Thermally stable transparent resistive random access memory. Among the various types of memory devices, resistive random access memory reram devices have attracted much attention for use in high integration density and fast memory applications using several metal oxides or nitrides, organic materials, and carbonbased materials as the resistance layer 2,3,4,5,6,7,8,9. Experimentally, the 119oriented cbti144 thin films were deposited onto the itoglass substrates by rf magnetron sputtering followed by rapid thermal. We resort to the thermal reaction model of rram for the present analysis. Investigating the temperature effects on resistive random access. Overview of emerging nonvolatile memory technologies jagan singh meena, simon min sze. To reveal the actual working mechanism in transparent. Resistive random access memory rram is one of the most promising candidates of nextgeneration nonvolatile memories.
Transparent resistive random access memory and its characteristics. These rram devices can be constructed using metalinsulatormetal mim structure, which provides fully transparency that is achieved in both a widebandgap active material and a widebandgap bottomtop electrodes. The resistive random access memory rram, based on the reversible switching between different resistance states, is a promising candidate for nextgeneration nonvolatile memories. Thermally stable transparent resistive random access. Jan 11, 2017 resistive random access memory rramreram is a new type of memory designed to be nonvolatile. According to the invention, the resistive material is a large energy gap. Introduction recently, due to its excellent characteristics, such as low power, highspeed operation and simple structure, resistive random access memory rram has been. Pcm, and resistive randomaccess memory rram combine the speed of static randomaccess memory sram, the density of dynamic randomaccess.
The resistive random access memory rram based nonvolatile memory devices are. The integration of the transparent itonioito resistive randomaccess memory reram with verticallycoupled bus waveguides, which is ultimately emerged as a rerambased microdisk resonator fabricated on lithium niobate linbo3 substrate, is successfully realized. Status and prospects of znobased resistive switching memory. A resistive random access memory rram includes a top electrode te, a bottom electrode be, and a transition metal oxide tmo layer between the top and the bottom electrodes.
The integrated vertically coupled resistive randomaccess. Resistive random access memory enabled by carbon nanotube. Boosting the performance of resistive switching memory with a. The invention discloses a full transparent resistive random access memory and application of barium stannate on the aspect of using the barium stannate as a transparent material with the stable resistance changing characteristic and belongs to the technical field of a semiconductor nonvolatile memory. Graphene and related materials for resistive random access. Investigating the temperature effects on resistive random. Transparent and flexible resistive switching memory devices. The emerging nvm candidates are spintransfertorque magnetoresistive random access memory sttmram 2, phase change random access memory pcram 3, and resistive random access memory rram 4. All layers, including an active layer and top and bottom ito electrodes, were deposited on a glass substrate by either spin coating or inkjet printing using a solgel solution. Wang et al reported the thermoelectric seebeck effect in oxidebased resistive switching memory. Particularly, memory devices indispensable for any kind of electronic systems draw most of attentions.
Request pdf transparent resistive random access memory and its characteristics for nonvolatile resistive switching this report covers the fabrication of a fully transparent resistive random. Resistive random access memory rram is capable of reversible switching between high resistance state hrs and low resistance state lrs under suitable electrical stress, which has been con. Comparing with the traditional floating gate flash memory, rram has advantages in cell structure, operation speed, scalability and ease of 3d integration. This lecture is a comprehensive tutorial of metal oxidebased rram technology from device fabrication to array architecture design. Point contact bipolar resistive switching observed in. The itoagito multilayered bottom electrode provides superior flexibility as well as high transparency compared to devices with ito single. The resistive random access memory rram is considered to be a strong candidate which is. This report covers the fabrication of a fully transparent resistive random access memory trram device based on an ito indium tin oxideznoito capacitor structure and. It is under development by a number of companies, and some have already patented their own versions of the technology. We fabricated allsolution processed, fully transparent resistive random access memory soltrram with a configuration of itogaznogzoito. To reveal the actual working mechanism in transparent rerams with the ito electrode. Request pdf transparent flexible resistive random access memory fabricated at room temperature we report the room temperature.
Cn102709472a fulltransparent resistive random access. A volatile memory loses stored data when power is removed, which is the case for dynamic random access memory dram and static random access memory sram. San rafael, california 1537 fourth street, san rafael, ca 94901 usa. Graphene and related materials for resistive random access memories fei hui, enric grustangutierrez, shibing long, qi liu, anna k. Resistive switching of plasma treated zinc oxide nanowires. This transparent rram is initial electroforming free, since the hfox layer was fabricated at the oxygen poor condition with an o2ar ratio of 1. In this work, we provide a comprehensive discussion on the various models proposed for the design and description of resistive random access memory rram, being a nascent technology is heavily reliant on accurate models to develop efficient working designs and standardize its implementation across devices. Solution processed resistive random access memory devices for. However, poor understanding of its working mechanism in transparent rerams with the indium tin oxide ito electrode is still a critical problem and will hinder its widespread applications. Nov 27, 20 thermally stable transparent resistive random access memory based on all. We report the room temperature fabrication of highly transparent and flexible resistive random access memory devices based on an ito indium tin oxidezno zinc oxideitoagito capacitor structure on a polyethersulfone flexible substrate. The asdeposited vo thin films were deposited onto transparent indium tin oxide ito substrate for the possible application in the structure of system on panel sop devices. Transparent multilevel resistive switching phenomena.
The electrical conduction and bipolar switching properties of resistive random access memory rram cells with transparent calcium bismuth titanate cabi 4 ti 4 o 15 cbti144 thin films were investigated. A transparent resistive random access memory trram based on ito gd 2 o 3 ito capacitor structure is successfully fabricated on glass substrate. Pdf resistive switching modification by ultraviolet. Bipolar resistive switching properties in transparent. Transparent and flexible resistive random access memory based. This report covers the fabrication of a fully transparent resistive random access memory trram device based on an ito indium tin oxideznoito capacitor structure and its resistive switching. Resistive switching behavior of ga doped znonanorods film conductive bridge random access memory p singh, fm simanjuntak, a kumar, ty tseng thin solid films 660, 828833, 2018. A collective study on modeling and simulation of resistive. Teo abstractwe report an indiumfree transparent resistive switching random access memory device based on gzoga 2o 3znoga 2o 3gzo structure by metalorganic chemical vapor deposition. An indiumfree transparent resistive switching random access. Transparent flexible resistive random access memory fabricated at. Resistive random access memory reram or rram is a type of nonvolatile nv random access ram computer memory that works by changing the resistance across a dielectric solidstate material, often referred to as a memristor.
Resistive random access memory rram synthesis lectures. Recently, transparent memory would be useful in invisible electronics. Resistive random access memory rramreram is a new type of memory designed to be nonvolatile. Rram technology has made significant progress in the past decade as a competitive candidate for the next generation nonvolatile memory nvm. Among the various types of memory devices, resistive random access memory reram devices have attracted much attention for use in high integration density and fast memory applications using. The rram further includes a metal cap layer above the top electrode and a transparent metal oxide tco layer between the metal cap layer and the top electrode. Jan 22, 2016 resistive random access memory rram or reram is a type of nonvolatile nv random access ram computer memory that works by changing the resistance across a dielectric solidstate material.
An overview of materials issues in resistive random access memory. Reram, also called rram resistive random access memory, is considered to be a type of memristor technology a passive twoterminal electronic device that is designed to express only the property of an electronic component that lets it recall the last resistance it had before being shut off memristance. We report on the magnetic field control of a bipolar resistive switching in agtio2fto based resistive random access memory device through iv characteristics. Over the last few decades, a variety of nvm devices such as flash memory, resistive random access memory rram, phase change memory pcm, ferroelectric memory feram, and magnetic random access memory mram have emerged, though each has some. Oxide heterostructures jie shang cas key laboratory of magnetic, materials and devices, ningbo institute of materials technology and engineering, chinese academy of sciences, ningbo, 315201 p. Boosting the performance of resistive switching memory. A fully transparent resistive memory trram based on hafnium oxide hfo 2 with excellent transparency, resistive switching capability, and environmental stability is demonstrated.
Request pdf transparent resistive random access memory trram based on gd2o3 film and its resistive switching characteristics a transparent resistive. To make them more durable, researchers have developed a new type of nvm resistive random access memory rram which offers an alternative storage mechanism based on the resistive switching properties of electricallytriggered conductive nanofilaments cnfs. Among various nextgeneration nvms, resistive random access memory rram is a promising candidate for future memory due to its highefficiency, highspeed and energysaving characteristics. An overview of resistive random access memory devices. All itobased transparent resistive switching random access. Bipolar switching characteristics of rram cells with. The fabricated trram has a transmittance of 81% including the substrate in the visible region and an excellent switching behavior under 3 v. Several emerging nonvolatile memory nvm technologies have been pursued toward to achieving part of these ideal characteristics. Compared with zno trram, hfo 2 trram shows reliable performance. An indiumfree transparent resistive switching random.
Reram based on a new material, such as metal oxide and organic compound. Series synthesis digital library of engineering and computer science. Transparent resistive random access memory and its. The memory operates by changing the resistance of special dielectric material called a memresistor memory resistor whose. On the other hand, a number of research studies are being undertaken on the resistive random access memory rram, with the modulation of resistance by an electrical stimulus using a variety of inorganic, organic and biomaterials. If the address matches an existing account you will receive an email with instructions to reset your password.
In this work, for the first time we present a feasibility of stable unipolar resistive switching rs characteristics with reset current of submicron ampere for the fully transparent itooxygendoped itoito memory capacitors, i. The results substantiate decrease in saturated temperature with increase in the radius and resistivity of filament for the investigated rram devices. Resistive random access memory cells have a capacitor like structure composed of insulation or semiconductor materials that are sandwiched between two highly conductive electrodes as shown in figure1. Hfoxbased resistive random access memory with an active area down to few nanometers transparent resistive random access memory trram device based on an ito indium tin oxideznoito capacitor structure and its resistive switching characteristics. Flexible, transferable and conformal egg albumen based. This report covers the fabrication of a fully transparent resistive random access memory trram device based on an ito indium tin oxideznoito capacitor structure and its resistive switching characteristics. Rram device based on hafnium oxide hfox storage layer and indium. This report covers the fabrication of a fully transparent resistive random access memory trram device based on an ito indium tin. Wang, effects of electrodes on the switching behavior of strontium titanate nickelate resistive random access memory. The bipolar switching and electrical conduction properties in transparent vanadium oxide vo resistance random access memory device were investigated in this study.
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